理工书库 lilin | Design Procedure for Two-Stage CMOS Opamp using gm/ID design Methodology in 16 nm FinFET Technology

Design Procedure for Two-Stage CMOS Opamp using gm/ID design Methodology in 16 nm FinFET Technology

Design Procedure for Two-Stage CMOS Opamp using gm/ID design Methodology in 16 nm FinFET Technology

Bakr Hesham & El-Sayed Hasaneen & Hesham F. A. Hamed

FinFET Moderate inversion Opamp design Week inversion gm/ID methodology

Publisher: IEEE

Description:

2019 31st International Conference on Microelectronics (ICM);2019; ; ;